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The A1P35S12M3 from STMicroelectronics is an Insulated Gate Bipolar Transistors. Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel. It is used in electronic designs requiring insulated gate bipolar transistors functionality.
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The A1P35S12M3 is currently in production (Active). Contact us for the most current availability and alternatives.
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Integrated Proximity Sensor, 100mm Sense Distance, 2.6V to 3V Supply, Optical LGA-12
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