NVH4L050N170M1 Limited Part Number Data

Limited Part Number Data

Standard Package

450

Packaging

Bulk

FET Type

N-Channel

Technology

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)

1700 V

Current - Continuous Drain (Id) @ 25°C

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

76mOhm @ 35A, 20V

Vgs(th) (Max) @ Id

4.3V @ 10mA

Gate Charge (Qg) (Max) @ Vgs

105 nC @ 20 V

Vgs (Max)

+25V, -15V

Input Capacitance (Ciss) (Max) @ Vds

2063 pF @ 1000 V

Power Dissipation (Max)

333W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Grade

Automotive

Qualification

AEC-Q101

Mounting Type

Through Hole

Supplier Device Package

TO-247-4L

Package / Case

TO-247-4

Category

Discrete Semiconductor Products<br>Transistors<br>FETs, MOSFETs<br>Single FETs, MOSFETs

Moisture Sensitivity Level (MSL)