NTBL023N065M3S Limited Part Number Data

Limited Part Number Data

Standard Package

2,000

Packaging

Bulk

FET Type

N-Channel

Technology

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

77A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V, 18V

Rds On (Max) @ Id, Vgs

32.6mOhm @ 20A, 18V

Vgs(th) (Max) @ Id

4V @ 10mA

Gate Charge (Qg) (Max) @ Vgs

69 nC @ 18 V

Vgs (Max)

+22V, -8V

Input Capacitance (Ciss) (Max) @ Vds

1950 pF @ 400 V

Power Dissipation (Max)

312W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HPSOF

Package / Case

8-PowerSFN

Category

Discrete Semiconductor Products<br>Transistors<br>FETs, MOSFETs<br>Single FETs, MOSFETs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Other Names

488-NTBL023N065M3S