Use this summary for discovery only. Confirm all design-critical values against current manufacturer-controlled documentation.
Common questions from engineers and buyers evaluating this part.
The 934006620112 from NXP Semiconductors is a RF Power Field-Effect Transistors. RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET. It is used in electronic designs requiring rf power field-effect transistors functionality.
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The 934006620112 is Discontinued (obsolete). Remaining stock may be limited. Contact us for the most current availability and alternatives.
Commercial availability, condition, packaging and traceability are confirmed against your exact requirement through RFQ.
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