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The BSH205G2A from Nexperia is a Power Field-Effect Transistors. Power Field-Effect Transistor, 2.6A I(D), 20V, 0.118ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB. It is used in electronic designs requiring power field-effect transistors functionality.
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The BSH205G2A is currently in production (Active). Contact us for the most current availability and alternatives.
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